Basmaji et al., 1988 - Google Patents
MOVPE of Al x Ga 1-x As alloys above 850° CBasmaji et al., 1988
- Document ID
- 1142500839901311237
- Author
- Basmaji P
- Leycuras A
- Leymarie J
- Gibart P
- Gauthier D
- Portal J
- Gil B
- Publication year
- Publication venue
- Journal of Crystal Growth
External Links
Snippet
Abstract Undoped and Sn-doped Al x Ga 1-x As epitaxial layers were grown at high temperatures (850-950 C) by MOVPE. Undoped samples reveal better quality optical properties than alloys grown at the usual temperatures. This is shown by low temperature …
- 238000002488 metal-organic chemical vapour deposition 0 title abstract description 4
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