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Yokoyama et al., 1987 - Google Patents

Reduction of backgating effect in MBE-grown GaAs/AlGaAs HEMT's

Yokoyama et al., 1987

Document ID
1145104531767899034
Author
Yokoyama T
Suzuki M
Yamamoto T
Saito J
Ishikawa T
Publication year
Publication venue
IEEE electron device letters

External Links

Snippet

We have investigated the backgating effect in high electron mobility transistors (HEMT's) fabricated on MBE-grown GaAs/AlGaAs layers, which is undesirable for LSI fabrication. Comparing five different types of devices, we related the backgating effect to the interface …
Continue reading at ieeexplore.ieee.org (other versions)

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