Shi et al., 2024 - Google Patents
A Programmable Ambient Light Sensor with Dark Current Compensation and Wide Dynamic RangeShi et al., 2024
View PDF- Document ID
- 11242563119739721316
- Author
- Shi N
- Yang J
- Cao Z
- Jin X
- Publication year
- Publication venue
- Sensors
External Links
Snippet
Ambient light sensors are becoming increasingly popular due to their effectiveness in extending the battery life of portable electronic devices. However, conventional ambient light sensors are large in area and small in dynamic range, and they do not take into account the …
- 238000000034 method 0 abstract description 14
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
- H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20110180693A1 (en) | Photodiode front end with improved power supply rejection ratio (psrr) | |
| CN104251741B (en) | A kind of self adaptation infrared focal plane array reading circuit | |
| CN201561800U (en) | Ambient light detector | |
| US6982406B2 (en) | Simple CMOS light-to-current sensor | |
| Shi et al. | A Programmable Ambient Light Sensor with Dark Current Compensation and Wide Dynamic Range | |
| JP4429240B2 (en) | Optical sensor circuit and light receiving module | |
| Papalias et al. | Making sense of light sensors | |
| Sun et al. | A novel readout integrated circuit with a dual-mode design for single-and dual-band infrared focal plane array | |
| JP2006214781A (en) | Photodetector | |
| Huang et al. | Real-Time Ultraviolet Flame Detection System Based on 4H-SiC Phototransistor | |
| Zhang et al. | Readout integrated circuit with multi-mode background suppression for long wavelength infrared focal plane arrays | |
| JP2004179651A (en) | Photodetector and detection method of incident light | |
| Tang et al. | A linear 126-dB dynamic range light-to-frequency converter with dark current suppression upto 125° C for blood oxygen concentration detection | |
| Bulteel et al. | Fully integrated blue/UV SOI CMOS photosensor for biomedical and environmental applications | |
| Cui et al. | A charge compensation phototransistor for high-dynamic-range CMOS image sensors | |
| CN109347469A (en) | Light-controlled switching circuit based on crystal of molybdenum disulfide pipe | |
| CN111511068B (en) | Chip type photoelectric sensor and gesture recognition device | |
| CN208937179U (en) | A kind of self-mixing Terahertz linear array detector is read and display module | |
| Gevin et al. | IDeF-X V1. 0: A new 16-channel low-noise analog front-end for Cd (Zn) Te detectors | |
| CN109728121B (en) | Wide-temperature large-dynamic-range mid-infrared photoelectric detector and detection module | |
| Guellec et al. | ROIC development at CEA for SWIR detectors: Pixel circuit architecture and trade-offs | |
| Zhou et al. | High-dynamic-range photodetecting scheme based on PEPT with a large output swing | |
| Kauert et al. | A monolithic field segment photo sensor system | |
| Geske et al. | Low-capacitance InGaAs detectors for high-speed, wide field-of-view sensing applications | |
| Pawluczyk et al. | Higher operation temperature quadrant photon detectors of 2-11 µm wavelength radiation with large photosensitive areas |