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Nomura et al., 2006 - Google Patents

High temperature operation AlGaN/GaN HFET with a low on-state resistance, a high breakdown voltage and a fast switching capacity

Nomura et al., 2006

Document ID
10978821427521009634
Author
Nomura T
Kambayashi H
Masuda M
Ishii S
Ikeda N
Lee J
Yoshida S
Publication year
Publication venue
2006 IEEE International Symposium on Power Semiconductor Devices and IC's

External Links

Snippet

Improved characteristics of an AlGaN/GaN HFET are reported. We introduced new fabrication processes using Ti/AlSi/Mo ohmic electrode and a low refractive index SiN x to decrease the contact resistance and gate leakage current. The AlGaN/GaN HFET showed …
Continue reading at ieeexplore.ieee.org (other versions)

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