Sun et al., 2016 - Google Patents
Enhanced photoluminescence from porous silicon by rare earth doping and DBR structuresSun et al., 2016
- Document ID
- 10946487900493695761
- Author
- Sun D
- Jia Z
- Lv X
- et al.
- Publication year
- Publication venue
- Optoelectronics and Advanced Materials-Rapid Communications
External Links
Snippet
We report a new way to enhance the photoluminescence of porous silicon (PS) in red light (625 nm) under room temperature by doping the rare earth (Yb) in porous silicon with distributed Bragg reflection (DBR) structures. It is observed that a suitable concentration of …
- 229910021426 porous silicon 0 title abstract description 17
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