Nothing Special   »   [go: up one dir, main page]

Lu et al., 2022 - Google Patents

High-power terahertz pulse generation from bias-free nanoantennas on graded composition InGaAs structures

Lu et al., 2022

View HTML @Full View
Document ID
1064956184127624508
Author
Lu P
Turan D
Jarrahi M
Publication year
Publication venue
Optics Express

External Links

Snippet

We present a bias-free photoconductive emitter that uses an array of nanoantennas on an InGaAs layer with a linearly graded Indium composition. The graded InGaAs structure creates a built-in electric field that extends through the entire photoconductive active region …
Continue reading at opg.optica.org (HTML) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infra-red, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material

Similar Documents

Publication Publication Date Title
US11231318B2 (en) Photoconductive detector device with plasmonic electrodes
Dietz et al. THz generation at 1.55 µm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions
Preu et al. Tunable, continuous-wave terahertz photomixer sources and applications
Benicewicz et al. Scaling of terahertz radiation from large-aperture biased photoconductors
Turan et al. Plasmonics-enhanced photoconductive terahertz detector pumped by Ytterbium-doped fiber laser
Yardimci et al. Impact of substrate characteristics on performance of large area plasmonic photoconductive emitters
Greene et al. Picosecond pump and probe spectroscopy utilizing freely propagating terahertz radiation
Ahmadivand et al. Hot electron generation by aluminum oligomers in plasmonic ultraviolet photodetectors
Lu et al. High-power terahertz pulse generation from bias-free nanoantennas on graded composition InGaAs structures
Lu et al. High-sensitivity telecommunication-compatible photoconductive terahertz detection through carrier transit time reduction
Kostakis et al. Terahertz Generation and Detection Using Low Temperature Grown InGaAs-InAlAs Photoconductive Antennas at 1.55$\mu {\hbox {m}} $ Pulse Excitation
Yarotski et al. Ultrafast carrier-relaxation dynamics in self-assembled InAs/GaAs quantum dots
Arlauskas et al. Strong terahertz emission and its origin from catalyst-free InAs nanowire arrays
Chen et al. Hot-carrier extraction in nanowire-nanoantenna photovoltaic devices
Bai et al. Broadband and photovoltaic THz/IR response in the GaAs-based ratchet photodetector
Nevinskas et al. Terahertz pulse generation from (111)-cut InSb and InAs crystals when illuminated by 1.55-μm femtosecond laser pulses
Bhattacharya et al. Enhanced terahertz emission bandwidth from photoconductive antenna by manipulating carrier dynamics of semiconducting substrate with embedded plasmonic metasurface
Tong et al. Antenna-assisted subwavelength metal–InGaAs–metal structure for sensitive and direct photodetection of millimeter and terahertz waves
Ciano et al. Terahertz absorption-saturation and emission from electron-doped germanium quantum wells
Preu et al. Principles of THz generation
Lu et al. Bias-free terahertz generation from a silicon-compatible photoconductive emitter operating at telecommunication wavelengths
Lu et al. Frequency-domain terahertz spectroscopy using long-carrier-lifetime photoconductive antennas
Liu et al. Carrier dynamics of terahertz emission from low-temperature-grown GaAs
Yoshikawa et al. InAs/GaAs quantum dot infrared photodetectors on on‐axis Si (100) substrates
Lu et al. 860 µW terahertz power generation from graded composition InGaAs photoconductive nanoantennas