Wang et al., 2006 - Google Patents
A 90nm CMOS low noise amplifier using noise neutralizing for 3.1-10.6 GHz UWB systemWang et al., 2006
- Document ID
- 10537023900057672112
- Author
- Wang C
- Wang C
- Publication year
- Publication venue
- 2006 Proceedings of the 32nd European Solid-State Circuits Conference
External Links
Snippet
This paper presents a wide-band low noise amplifier (LNA) using noise neutralizing technique for 3-10 GHz ultra-wideband (UWB) system. The thermal noise neutralizing method allows for the design of a low noise figure (NF) LNA and broadband input …
- 230000003472 neutralizing 0 title abstract description 27
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45188—Non-folded cascode stages
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45197—Pl types
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/605—Distributed amplifiers
- H03F3/607—Distributed amplifiers using FET's
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45704—Indexing scheme relating to differential amplifiers the LC comprising one or more parallel resonance circuits
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0283—Reducing the number of Dc-current paths
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106712725A (en) | Ultra wideband high-gain low noise amplifier based on monolithic microwave integrated circuit | |
Reja et al. | An area-efficient multistage 3.0-to 8.5-GHz CMOS UWB LNA using tunable active inductors | |
Wang et al. | A 90nm CMOS low noise amplifier using noise neutralizing for 3.1-10.6 GHz UWB system | |
Yousef et al. | A 0.18 μm CMOS current reuse ultra-wideband low noise amplifier (UWB-LNA) with minimized group delay variations | |
Ma et al. | A 30GHz 2dB NF low noise amplifier for Ka-band applications | |
Meaamar et al. | A 3–8 GHz low-noise CMOS amplifier | |
Choi et al. | A CMOS band-pass low noise amplifier with excellent gain flatness for mm-wave 5G communications | |
Shams et al. | A 3.5 to 7 GHz Wideband Differential LNA with g m Enhancement for 5G Applications | |
Kobal et al. | A G m-Boosting Technique for Millimeter-Wave Low-Noise Amplifiers in 28-nm Triple-Well Bulk CMOS Using Floating Resistor in Body Biasing | |
Hu et al. | An ultra-wideband resistive-feedback low-noise amplifier with noise cancellation in 0.18 μm digital CMOS | |
CN112383280A (en) | Ku-waveband low-power-consumption CMOS low-noise amplifier circuit | |
Abubaker et al. | Balun LNA thermal noise analysis and balancing with common-source degeneration resistor | |
Wang et al. | A 1V full-band cascoded UWB LNA with resistive feedback | |
Zhou et al. | Ultra-wideband low noise amplifier employing noise cancelling and simultaneous input and noise matching technique | |
CN214675077U (en) | Receiver and amplifier thereof | |
Chen et al. | 3–10GHz CMOS distributed amplifier low-power and low-noise and high-gain low noise amplifier for UWB systems | |
Luo et al. | A 21-41 GHz Compact Wideband Low-Noise Amplifier Based on Transformer-Feedback Technique in 65-nm CMOS | |
Wei et al. | A low-power ultra-compact CMOS LNA with shunt-resonating current-reused topology | |
Ali et al. | A Broadband Low-Noise Amplifier for D-Band Communications in SiGe BiCMOS Technology | |
Kim et al. | High‐Gain Wideband CMOS Low Noise Amplifier with Two‐Stage Cascode and Simplified Chebyshev Filter | |
Zhang et al. | A 12.9-38.6-GHz CMOS LNA With Triple-Coupled Transformer-Based Input Matching Technique | |
ElBadry et al. | A 24-41.5 GHz LNA with enhanced IP1dB in 65-nm BULK CMOS for 5G applications | |
Taris et al. | A 1-v 2ghz vlsi cmos low noise amplifier | |
Huang et al. | Design of a Six-stage W-band Low-Noise Amplifier Using a 90-nm CMOS Technology | |
Benmansour et al. | A tuned wideband LNA in 0.25/spl mu/m IBM process for RF communication applications |