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Verma et al., 2022 - Google Patents

Fabrication and Characterization of P3HT/MoS₂ Thin-Film Based Ammonia Sensor Operated at Room Temperature

Verma et al., 2022

Document ID
10590518006428923101
Author
Verma A
Sahu P
Chaudhary V
Singh A
Mishra V
Prakash R
Publication year
Publication venue
IEEE Sensors Journal

External Links

Snippet

The composites of polymers and two-dimensional (2D) materials show promising applications in the area of gas sensing. In this work, we report an efficient ammonia gas (NH 3) sensor based on poly (3-hexylthiophene)/molybdenum disulfide (P3HT/MoS 2) …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0545—Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
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