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Ismail et al., 2008 - Google Patents

Studies on fabrication and characterization of a high-performance Al-doped ZnO/n-Si (1 1 1) heterojunction photodetector

Ismail et al., 2008

Document ID
101004583984338222
Author
Ismail R
Al-Naimi A
Al-Ani A
Publication year
Publication venue
Semiconductor science and technology

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Snippet

Abstract ZnO: Al/c-Si (1 1 1) isotype heterojunction photodetectors were fabricated by a chemical spray pyrolysis technique. High responsivity and good junction characteristics were obtained after post-deposition rapid thermal annealing (RTA). Dark and illuminated I–V …
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