Nothing Special   »   [go: up one dir, main page]

Ihring et al., 2011 - Google Patents

Surface-micromachined thermoelectric infrared focal-plane array with high detectivity for room temperature operation

Ihring et al., 2011

Document ID
9923431716299031029
Author
Ihring A
Kessler E
Dillner U
Haenschke F
Schinkel U
Meyer H
Publication year
Publication venue
Microelectronic engineering

External Links

Snippet

Thermopile detectors are particularly well suited for spectral imaging, space science applications, track recording, presence detection and applications with low energy consumption. The purpose of this work is the fabrication of a surface-micromachined 2-D …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/10—Radiation pyrometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry using electric radiation detectors using resistors, thermistors, or semi-conductors sensitive to radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/02—Details
    • G01J5/04—Casings Mountings
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H01L35/32—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermo-couple forming the device including details about, e.g., housing, insulation, geometry, module
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/10—Radiation pyrometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • H01L35/20—Selection of the material for the legs of the junction using inorganic compositions comprising metals only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/02—Details
    • G01J5/08—Optical features
    • G01J5/0803—Optical elements not provided otherwise, e.g. optical manifolds, gratings, holograms, cubic beamsplitters, prisms, particular coatings
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H01L35/30—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/34—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/38—Radiation pyrometry using extension or expansion of solids or fluids
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J2005/0077—Imaging
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L37/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L37/02—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof using thermal change of dielectric constant, e.g. working above and below Curie point, e.g. pyroelectric devices

Similar Documents

Publication Publication Date Title
Xu et al. MEMS-based thermoelectric infrared sensors: A review
US6335478B1 (en) Thermopile infrared sensor, thermopile infrared sensors array, and method of manufacturing the same
US20140326883A1 (en) Nanowire thermoelectric infrared detector
Li et al. A front-side microfabricated tiny-size thermopile infrared detector with high sensitivity and fast response
Garcı́a et al. IR bolometers based on amorphous silicon germanium alloys
Zhou et al. Development of a thermopile infrared sensor using stacked double polycrystalline silicon layers based on the CMOS process
Dong et al. An uncooled microbolometer infrared detector based on poly-SiGe thermistor
Zhou et al. CMOS compatible midinfrared wavelength-selective thermopile for high temperature applications
Hui et al. High performance NEMS resonant infrared detector based on an aluminum nitride nano-plate resonator
Ihring et al. Surface-micromachined thermoelectric infrared focal-plane array with high detectivity for room temperature operation
Chen Fully quantitative characterization of CMOS–MEMS polysilicon/titanium thermopile infrared sensors
Huhn et al. Uncooled antenna-coupled terahertz detectors with 22 μs response time based on BiSb/Sb thermocouples
Guo et al. Microbolometer with a salicided polysilicon thermistor in CMOS technology
Modarres-Zadeh et al. High-responsivity thermoelectric infrared detectors with stand-alone sub-micrometer polysilicon wires
Dong et al. Fabrication and characterization of integrated uncooled infrared sensor arrays using a-Si thin-film transistors as active elements
He et al. Improved thermopile on pyramidally-textured dielectric film
Hiromoto et al. Room-temperature THz antenna-coupled microbolometer with a Joule-heating resistor at the center of a half-wave antenna
Houlet et al. Thermopile sensor-devices for the catalytic detection of hydrogen gas
WO2013089824A1 (en) Nanowire thermoelectric infrared detector
Ahmed et al. Characterization of an amorphous ge/sub x/si/sub 1-x/o/sub y/microbolometer for thermal imaging applications
Dong et al. Design and fabrication of single-chip a-Si TFT-based uncooled infrared sensors
Lee et al. Uncooled thermopile infrared detector with chromium oxide absorption layer
Varpula et al. Uncooled nano-thermoelectric bolometers for infrared imaging and sensing
US20230088920A1 (en) Infrared sensor and method of controlling infrared sensor
Ihring et al. A planar thin-film peltier cooler for the thermal management of a dew-point sensor system