Nothing Special   »   [go: up one dir, main page]

Banerjee et al., 2008 - Google Patents

Cryogenic aerosols and supercritical fluid cleaning

Banerjee et al., 2008

Document ID
9849181196456430982
Author
Banerjee S
Reidy R
Mauer L
Publication year
Publication venue
Handbook of Silicon Wafer Cleaning Technology

External Links

Snippet

The importance of precision cleaning in electronic manufacturing areas can hardly be overstated. It is well known that the final device yield and performance are strongly linked to the cleaning efficiency during its fabrication, as described in Chapter 2. Cleaning or surface …
Continue reading at books.google.com (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105After-treatment
    • H01L21/31058After-treatment of organic layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment

Similar Documents

Publication Publication Date Title
US7119052B2 (en) Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
US7585777B1 (en) Photoresist strip method for low-k dielectrics
US6763840B2 (en) Method and apparatus for cleaning substrates using liquid carbon dioxide
KR20080050488A (en) Removal of particle contamination on patterned silicon/silicon dioxide using dense fluid/chemical formulations
US8206788B2 (en) Method for treating a damaged porous dielectric
JP2008547050A (en) Concentrated fluid composition for removal of cured photoresist, post-etch residue and / or underlying antireflective coating layer
JP2008541479A (en) A method to remove polar fluid from the surface using supercritical fluid
JP2008538013A (en) Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems
US7977121B2 (en) Method and composition for restoring dielectric properties of porous dielectric materials
Saga et al. Wafer cleaning using supercritical CO2 in semiconductor and nanoelectronic device fabrication
US8415255B2 (en) Pore sealing and cleaning porous low dielectric constant structures
WO2005038898A1 (en) Removal of post etch residues and copper contamination from low-k dielectrics using supercritical co2 with diketone additives
Banerjee et al. Cryogenic aerosols and supercritical fluid cleaning
Matz et al. Supercritical CO2 applications in BEOL cleaning
Reidy et al. Cryogenic Aerosols and Supercritical Fluid Cleaning and Surface Conditioning
JP2007536730A (en) Compositions and methods for drying patterned wafers during the manufacture of integrated circuit products
TWI278927B (en) Fluid assisted cryogenic cleaning
Baklanov et al. Challenges of clean/strip processing for Cu/low-k technology
JP2005026338A (en) Cleaning liquid for fine structure objects
Korzenski et al. Chemical additive formulations for silicon surface cleaning in supercritical carbon dioxide
Reinhardt et al. AN ADVANCED BEOL CLEANING METHOD
Wagener et al. Non-damaging particle removal using cryogenic aerosols
Tseng et al. Supercritical CO/sub 2/clean with novel solution for 65 nm and beyond BEOL performance improvement
Mittal KAREN A. REINHARDT
Le et al. Wet Clean Applications in Porous Low‐k Patterning Processes