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Oshimura et al., 2011 - Google Patents

AlGaN/GaN heterostructure field-effect transistors on Fe-doped GaN substrates with high breakdown voltage

Oshimura et al., 2011

Document ID
9669112308339580877
Author
Oshimura Y
Sugiyama T
Takeda K
Iwaya M
Takeuchi T
Kamiyama S
Akasaki I
Amano H
Publication year
Publication venue
Japanese journal of applied physics

External Links

Snippet

AlGaN/GaN heterostructure field-effect transistors (HFETs) were fabricated by metalorganic vapor phase epitaxy (MOPVE) on c-plane Fe-doped GaN (GaN: Fe) substrates with different growth conditions of GaN buffer layers. The GaN buffer layers were grown at a V/III ratio of …
Continue reading at iopscience.iop.org (other versions)

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