Nothing Special   »   [go: up one dir, main page]

Choi et al., 2011 - Google Patents

Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates

Choi et al., 2011

View PDF
Document ID
9665577872969254936
Author
Choi J
Zoulkarneev A
Kim S
Baik C
Yang M
Park S
Suh H
Kim U
Bin Son H
Lee J
Kim M
Kim J
Kim K
Publication year
Publication venue
Nature Photonics

External Links

Snippet

Single-crystalline GaN-based light-emitting diodes (s-LEDs) on crystalline sapphire wafers can provide point-like light sources with high conversion efficiency and long working lifetimes. Recently, s-LEDs on silicon wafers have been developed in efforts to overcome the …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof

Similar Documents

Publication Publication Date Title
Choi et al. Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates
Ra et al. Full-color single nanowire pixels for projection displays
Lim et al. Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures
Chung et al. High-quality GaN films grown on chemical vapor-deposited graphene films
Johar et al. Universal and scalable route to fabricate GaN nanowire-based LED on amorphous substrate by MOCVD
US11502219B2 (en) Methods and devices for solid state nanowire devices
Kuykendall et al. Gallium Nitride Nanowires and Heterostructures: Toward Color‐Tunable and White‐Light Sources
Deng et al. A novel wavelength-adjusting method in InGaN-based light-emitting diodes
JP5388041B2 (en) Red light emitting semiconductor element and method for manufacturing red light emitting semiconductor element
Lee et al. InGaN/GaN blue light emitting diodes using freestanding GaN extracted from a Si substrate
You et al. Interface control for pure ultraviolet electroluminescence from nano-ZnO-based heterojunction devices
Cheng et al. Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions
Kim et al. Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils
Lupan et al. Comparative study of the ZnO and Zn1− xCdxO nanorod emitters hydrothermally synthesized and electrodeposited on p-GaN
Li et al. Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
Prabaswara et al. Direct growth of III-nitride nanowire-based yellow light-emitting diode on amorphous quartz using thin Ti interlayer
Pandey et al. III-nitride nanostructures for high efficiency micro-LEDs and ultraviolet optoelectronics
Li et al. III-Nitrides Light Emitting Diodes: Technology and Applications
Hong et al. Emission color-tuned light-emitting diode microarrays of nonpolar InxGa1–xN/GaN multishell nanotube heterostructures
Ding Improving radiative recombination efficiency of green light-emitting diodes
Vignesh et al. III-nitride nanowires for emissive display technology
Park et al. Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots
Young et al. Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202¯ 1) AlGaN/GaN buffer layers
Wang et al. Investigations on the optical properties of InGaN/GaN multiple quantum wells with varying GaN cap layer thickness
Park et al. Nonpolar GaN-based nanopillar green Light-Emitting Diode (Led) fabricated by using self-aligned In3Sn nanodots