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Suyama et al., 1987 - Google Patents

Electrical characteristics of MOSFET's utilizing Oxygen—Argon sputter-deposited gate Oxide films

Suyama et al., 1987

Document ID
9665374162109797562
Author
Suyama S
Okamoto A
Serikawa T
Publication year
Publication venue
IEEE transactions on electron devices

External Links

Snippet

This paper presents a detailed look at the electrical characteristics of MOSFET's utilizing oxygen-argon sputter-deposited gate-oxide films for low-temperature MOSFET fabrication. The gate-oxide films are deposited at low temperature (200° C) by oxygen-argon sputtering …
Continue reading at ieeexplore.ieee.org (other versions)

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