Wang et al., 2020 - Google Patents
Characteristics and techniques of GaN-based micro-LEDs for application in next-generation displayWang et al., 2020
View PDF- Document ID
- 9536468178741830717
- Author
- Wang Z
- Shan X
- Cui X
- Tian P
- Publication year
- Publication venue
- Journal of semiconductors
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Snippet
Due to the excellent optoelectronic properties, fast response time, outstanding power efficiency and high stability, micro-LED plays an increasingly important role in the new generation of display technology compared with LCD and OLED display. This paper mainly …
- 229910002601 GaN 0 title abstract description 22
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- H01L33/50—Wavelength conversion elements
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- H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
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