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Bechler et al., 2014 - Google Patents

Franz-Keldysh Effect in GeSn Detectors

Bechler et al., 2014

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Document ID
9307419640070291403
Author
Bechler S
Oehme M
Latzel O
Schmid M
Kostecki K
Koerner R
Gollhofer M
Kasper E
Schulze J
Publication year
Publication venue
ECS Transactions

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Snippet

Four different GeSn photodetectors with Sn content up to 5.6% are investigated. From current-voltage measurements with and without illumination, the spectral optical responsivity is determined. With the responsivity and the measured reflection, the absorption and the …
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    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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