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Zhou et al., 2017 - Google Patents

GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction

Zhou et al., 2017

Document ID
9137409205555499035
Author
Zhou S
Zheng C
Lv J
Gao Y
Wang R
Liu S
Publication year
Publication venue
Optics & Laser Technology

External Links

Snippet

We demonstrate GaN-based double-layer electrode flip-chip light-emitting diodes (DLE- FCLED) with highly reflective indium-tin oxide (ITO)/distributed bragg reflector (DBR) p-type contact and via hole-based n-type contacts. Transparent thin ITO in combination with TiO …
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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
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    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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