Riera-Galindo et al., 2018 - Google Patents
Role of polymorphism and thin-film morphology in organic semiconductors processed by solution shearingRiera-Galindo et al., 2018
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- 8997426280202045875
- Author
- Riera-Galindo S
- Tamayo A
- Mas-Torrent M
- Publication year
- Publication venue
- ACS omega
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Snippet
Organic semiconductors (OSCs) are promising materials for cost-effective production of electronic devices because they can be processed from solution employing high-throughput techniques. However, small-molecule OSCs are prone to structural modifications because of …
- 239000010409 thin film 0 title abstract description 153
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- H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
- H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
- H01L51/0508—Field-effect devices, e.g. TFTs
- H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
- H01L51/0545—Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
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- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
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- H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
- H01L51/0508—Field-effect devices, e.g. TFTs
- H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
- H01L51/0516—Field-effect devices, e.g. TFTs insulated gate field effect transistors characterised by the gate dielectric
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