Bazaliy et al., 2001 - Google Patents
Towards metallic magnetic memory: How to interpret experimental results on magnetic switching induced by spin-polarized currentsBazaliy et al., 2001
View PDF- Document ID
- 8761775650040825026
- Author
- Bazaliy Y
- Jones B
- Zhang S
- Publication year
- Publication venue
- Journal of Applied Physics
External Links
Snippet
In the field of magnetic memory the giant magnetoresistance effect provides a convenient way to read out the state of a spin-valve type device by passing a small current through it. It is now debated whether passing a large current through such a device could reliably switch …
- 230000005291 magnetic 0 title abstract description 30
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/028—Electrodynamic magnetometers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
- G01R33/1284—Spin resolved measurements; Influencing spins during measurements, e.g. in spintronics devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Bazaliy et al. | Towards metallic magnetic memory: How to interpret experimental results on magnetic switching induced by spin-polarized currents | |
Chen et al. | Electric field control of Néel spin–orbit torque in an antiferromagnet | |
Harder et al. | Electrical detection of magnetization dynamics via spin rectification effects | |
Hoffmann | Spin Hall effects in metals | |
US9478729B2 (en) | Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect | |
US9324403B2 (en) | Voltage-controlled magnetic anisotropy (VCMA) switch and magneto-electric memory (MERAM) | |
Yu et al. | Evidence for thermal spin-transfer torque | |
US7800938B2 (en) | Oscillating current assisted spin torque magnetic memory | |
Brataas et al. | Current-induced torques in magnetic materials | |
Braun et al. | Theory of transport through quantum-dot spin valves in the weak-coupling regime | |
US9087593B2 (en) | Random bit generator that applies alternating current (AC) to magnetic tunnel junction to generate a random bit | |
Ansermet | Perpendicular transport of spin-polarized electrons through magnetic nanostructures | |
CN102460697B (en) | High speed low power magnetic devices based on current induced spin-momentum transfer | |
Dieny et al. | Spin-transfer effect and its use in spintronic components | |
KR102006671B1 (en) | Magnetic element, skyrmion memory, solid-state electronic device, data-storage device, data processing and communication device | |
JP5508868B2 (en) | Magnetoresistive element | |
Kelly et al. | Spin-polarized current-induced magnetization reversal in single nanowires | |
Garcia et al. | Ballistic magnetoresistance in different nanocontact configurations: a basis for future magnetoresistance sensors | |
Zhou et al. | Research progress of current sensor based on spin-dependent magnetoresistance effect | |
Liu et al. | Magnetic configurations and state diagram of nanoring magnetic tunnel junctions | |
CN111542489A (en) | Spin transfer torque MRAM with auxiliary layer and method of operating the same | |
Morecroft et al. | Current-induced magnetization reversal in Ni Fe∕ Cu∕ Co∕ Au notched mesoscopic bars | |
Mangin et al. | Spin transfer torque effects in devices with perpendicular anisotropy | |
Krishnia et al. | Current-Driven Domain Wall Dynamics in Magnetic Heterostructures for Memory Applications | |
Logoboy et al. | Shape-dependent depinning of a domain wall by a magnetic field and a spin-polarized current |