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Mei et al., 1991 - Google Patents

Structural study of tin and carbon coimplanted silicon

Mei et al., 1991

Document ID
8761246170000528692
Author
Mei P
Schmidt M
Yang E
Wilkens B
Publication year
Publication venue
Journal of applied physics

External Links

Snippet

The alloy system Si x (Sn y C1− y) 1− x was investigated. The purpose is to form material with reduced strain at silicon heterojunctions. In this work, samples were prepared by coimplantation of tin and carbon ions into silicon wafers within the dosage range 1015–1016 …
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