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Razeghi et al., 2009 - Google Patents

Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the center for quantum devices

Razeghi et al., 2009

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Document ID
8751284879947757965
Author
Razeghi M
Hoffman D
Nguyen B
Delaunay P
Huang E
Tidrow M
Nathan V
Publication year
Publication venue
Proceedings of the IEEE

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Snippet

In recent years, Type-II InAs/GaSb superlattice photodetectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (MCT) technology in the …
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    • H01L31/103—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
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    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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