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Rane et al., 2014 - Google Patents

Microstructure, electrical resistivity and stresses in sputter deposited W and Mo films and the influence of the interface on bilayer properties

Rane et al., 2014

Document ID
8660123848551680850
Author
Rane G
Menzel S
Gemming T
Eckert J
Publication year
Publication venue
Thin Solid Films

External Links

Snippet

Sputter deposited W, Mo and bilayers of W/Mo on Si were prepared by varying the deposition conditions in order to obtain 100 nm thick films with low electrical resistivity. Investigations showed that the depositions carried out at low pressures and at 400° C …
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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