Yang et al., 2016 - Google Patents
A unified epi-seal process for fabrication of high-stability microelectromechanical devicesYang et al., 2016
View PDF- Document ID
- 8656492249251182594
- Author
- Yang Y
- Ng E
- Chen Y
- Flader I
- Kenny T
- Publication year
- Publication venue
- Journal of Microelectromechanical Systems
External Links
Snippet
This paper presents a thin-film wafer-level encapsulation process based on an epitaxial deposition seal that incorporates both narrow and wide lateral transduction gaps (0.7-50 μm), both in-plane and out-of-plane electrodes, and does not require release etch-holes in …
- 238000000034 method 0 title abstract description 73
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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