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Jia et al., 2014 - Google Patents

Effects of ultrathin AlAs interfacial layer on the structure and optical properties of GaInP epilayer grown on germanium

Jia et al., 2014

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Document ID
8450659097354455357
Author
Jia S
Chen G
He W
Dai P
Chen J
Lu S
Yang H
Publication year
Publication venue
Applied surface science

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Abstract Structure and optical properties of GaInP epilayer with the ultrathin interfacial layers grown on germanium by metal–organic vapor-phase epitaxy (MOVPE) were characterized by high resolution transmission electron microscopy (HRTEM), photoluminescence (PL) …
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    • H01L21/02381—Silicon, silicon germanium, germanium
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