Brown et al., 1997 - Google Patents

Classifications

• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
  • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
  • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
  • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
  • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
  • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
  • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
  • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential-jump barriers, and exhibiting a negative resistance characteristic
  • H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential-jump barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
  • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
  • H03K3/335—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with more than two electrodes and exhibiting avalanche effect
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
  • H03K3/01—Details
  • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
  • H03K3/64—Generators producing trains of pulses, i.e. finite sequences of pulses
  • H03K3/72—Generators producing trains of pulses, i.e. finite sequences of pulses with means for varying repetition rate of trains
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
  • H03K17/51—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used
  • H03K17/92—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using superconductive devices
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H01L47/00—Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
  • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
  • H03B19/16—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
  • H03B9/00—Generation of oscillations using transit-time effects
  • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
  • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
  • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
  • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
  • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
  • H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
  • H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
  • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K5/00—Manipulating pulses not covered by one of the other main groups in this subclass
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
  • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B

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