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Wu et al., 2011 - Google Patents

Leakage mechanism of cation-modified BiFeO3 thin film

Wu et al., 2011

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Document ID
8325133773021685531
Author
Wu J
Wang J
Xiao D
Zhu J
Publication year
Publication venue
Aip Advances

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To investigate the leakage mechanisms in cation-substituted BiFeO 3 (BFO) thin films, in Bi site or Fe site or both sites, Bi 0.92 La 0.08 FeO 3, BiFe 0.95 Mn 0.05 O 3, and Bi 0.92 La 0.08 Fe 0.95 Mn 0.05 O 3 thin films were grown in situ by radio frequency magnetic …
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    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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