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Rupp et al., 2013 - Google Patents

Laser backside contact annealing of SiC power devices: A prerequisite for SiC thin wafer technology

Rupp et al., 2013

Document ID
8129481381937923594
Author
Rupp R
Kern R
Gerlach R
Publication year
Publication venue
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

External Links

Snippet

We developed a new backside contact formation process for SiC power devices based on pulsed laser annealing providing an ohmic contact with lower contact resistance and better adhesion properties than contacts formed by conventional rapid thermal annealing. This …
Continue reading at ieeexplore.ieee.org (other versions)

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