Nothing Special   »   [go: up one dir, main page]

Rothman et al., 2016 - Google Patents

MCT APD focal plane arrays for astronomy at CEA-LETI

Rothman et al., 2016

Document ID
8115107463946239572
Author
Rothman J
de Borniol E
Gravrand O
Kern P
Feautrier P
Le Bouquin J
Boulade O
Publication year
Publication venue
High Energy, Optical, and Infrared Detectors for Astronomy VII

External Links

Snippet

HgCdTe avalanche photodiodes offers a new horizon for observing spatial or temporal signals of a low number infrared photons, enabling new IR science, telecommunication and defence applications. A large number of HgCdTe APD based detectors have been …
Continue reading at www.spiedigitallibrary.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/10—Radiation pyrometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry using electric radiation detectors using resistors, thermistors, or semi-conductors sensitive to radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter

Similar Documents

Publication Publication Date Title
Finger et al. SAPHIRA detector for infrared wavefront sensing
Huang et al. Type-II superlattice dual-band LWIR imager with M-barrier and Fabry–Perot resonance
Figgemeier et al. SWIR detectors for night vision at AIM
Finger et al. Development of HgCdTe large format MBE arrays and noise-free high speed MOVPE EAPD arrays for ground based NIR astronomy
Rothman et al. MCT APD focal plane arrays for astronomy at CEA-LETI
Rothman et al. High operating temperature SWIR HgCdTe APDs for remote sensing
Cabrera et al. Characterization of a 15-μ m cutoff HgCdTe detector array for astronomy
Klipstein et al. Type-II superlattice detector for long-wave infrared imaging
Rutz et al. InGaAs SWIR photodetectors for night vision
Rothman et al. HgCdTe APDs for free space optical communications
Gravrand et al. Design of a small pitch (7.5 µm) MWIR HgCdTe array operating at high temperature (130K) with high imaging performances
Rothman et al. HgCdTe APDs for time-resolved space applications
Rutz et al. InGaAs-based SWIR photodetectors for night vision and gated viewing
Gravrand et al. Latest achievements on MCT IR detectors for space and science imaging
Hofbauer et al. Performance of high-voltage CMOS single-photon avalanche diodes with and without well-modulation technique
Rothman et al. HgCdTe APDs for free space optical communications
Ivanov et al. T2SL development for space at IRnova: from eSWIR to VLWIR
Sun et al. Evaluation of space radiation effects on HgCdTe avalanche photodiode arrays for lidar applications
Li et al. Research on noise characteristics of EBAPS digital low light level device
Wang et al. Characteristic of e2v CMOS sensors for astronomical applications
Rothman et al. HgCdTe APDs detector developments for high speed, low photon number and large dynamic range photo-detection
Atkinson et al. Observatory deployment and characterization of SAPHIRA HgCdTe APD arrays
Starr et al. RVS WFIRST sensor chip assembly development results
Tamura et al. Development of InGaAs MPPC for NIR photon counting applications
Rutz et al. SWIR detectors for low photon fluxes