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Chinone et al., 1976 - Google Patents

Limitations of power outputs from continuously operating GaAs‐Ga1− x Al x As double‐heterostructure lasers

Chinone et al., 1976

Document ID
8050446998011227728
Author
Chinone N
Ito R
Nakada O
Publication year
Publication venue
Journal of Applied Physics

External Links

Snippet

Reported here are the results of measurements of several factors limiting the maximum output from GaAs‐Ga1− x Al x As double‐heterostructure injection lasers under continuous operation at room temperature. The factors are (i) catastrophic damage to the mirror facets …
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    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. alGaAs-laser, InP-based laser
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    • H01S5/22—Structure or shape of the semi-conductor body to guide the optical wave; Confining structures perpendicular to the optical axis, e.g. index- or gain-guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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