Nothing Special   »   [go: up one dir, main page]

Ma et al., 2018 - Google Patents

Method of junction temperature estimation and over temperature protection used for electric vehicle's IGBT power modules

Ma et al., 2018

Document ID
8037705146398202621
Author
Ma M
Sun Z
Wang Y
Wang J
Wang R
Publication year
Publication venue
Microelectronics Reliability

External Links

Snippet

Abstracts High-power insulated gate bipolar transistor (IGBT) modules are widely used in power electronic systems, their system reliability is received more and more attention. The junction temperature of power devices is an important factor affecting reliability of power …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring, busbar connections
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation; Temperature sensing arrangements
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Similar Documents

Publication Publication Date Title
Choi et al. Separation of wear-out failure modes of IGBT modules in grid-connected inverter systems
Ma et al. Method of junction temperature estimation and over temperature protection used for electric vehicle's IGBT power modules
Ma et al. A three-dimensional boundary-dependent compact thermal network model for IGBT modules in new energy vehicles
Baker et al. Improved reliability of power modules: A review of online junction temperature measurement methods
US7826985B2 (en) Power module life estimation fatigue function
Zhou et al. High-speed electro-thermal simulation model of inverter power modules for hybrid vehicles
Ye et al. A fast electro-thermal model of traction inverters for electrified vehicles
Zhihong et al. IGBT junction and coolant temperature estimation by thermal model
Judge et al. Power loss and thermal characterization of IGBT modules in the Alternate Arm converter
Ma et al. Reliability-cost models for the power switching devices of wind power converters
Anderson et al. An on-line fault diagnosis method for power electronic drives
Yang et al. Transient electro-thermal analysis for a MOSFET based traction inverter
Ma et al. Online junction temperature estimation using integrated NTC thermistor in IGBT modules for PMSM drives
Roy et al. Aging detection and state of health estimation of live power semiconductor devices using SSTDR embedded PWM sequence
Halick et al. Online computation of IGBT on-state resistance for off-shelf three-phase two-level power converter systems
Islam et al. Power loss and thermal impedance modeling of multilevel power converter with discontinuous modulation
Li et al. Real-time estimation of junction temperature in IGBT inverter with a simple parameterized power loss model
Ye et al. A drive cycle based electro-thermal analysis of traction inverters
Zhang et al. In situ diagnosis of wire bonding faults for multichip IGBT modules based on the crosstalk effect
Cheng et al. Parasitic extraction and power loss estimation of power devices
Sathik et al. Online junction temperature estimation of IGBT modules for Space Vector Modulation based inverter system
Xu et al. Si IGBT phase-leg module packaging and cooling design for operation at 200° C in hybrid electrical vehicle applications
Trintis et al. On-state voltage drop based power limit detection of IGBT inverters
Liu et al. An investigation on IGBT junction temperature estimation using online regression method
Cheng et al. Dynamic modeling framework for evaluating electromagnetic-electro-thermal behavior of power conversion system during load operation