Zhu et al., 2020 - Google Patents
Enhanced spin–orbit coupled photoluminescence of perovskite CsPbBr3 quantum dots by piezo-phototronic effectZhu et al., 2020
View PDF- Document ID
- 7852452402373781053
- Author
- Zhu L
- Wang Y
- Li D
- Wang L
- Wang Z
- Publication year
- Publication venue
- Nano Letters
External Links
Snippet
Piezo-phototronic effect is a fundamental effect of semiconductors lacking of central symmetry with geometries from one-dimensional (1D) nanowire to 3D bulk. Here, we present that the piezo-phototronic effect can even tune a spin–orbit coupled …
- 239000002096 quantum dot 0 title abstract description 147
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/54—Material technologies
- Y02E10/549—Material technologies organic PV cells
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nano-rods
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2251/00—Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Dong et al. | Metal Halide Perovskite for next-generation optoelectronics: progresses and prospects | |
Woo et al. | Temperature-dependent photoluminescence of CH3NH3PbBr3 perovskite quantum dots and bulk counterparts | |
Zhu et al. | Enhanced spin–orbit coupled photoluminescence of perovskite CsPbBr3 quantum dots by piezo-phototronic effect | |
Lin et al. | Nonblinking quantum-dot-based blue light-emitting diodes with high efficiency and a balanced charge-injection process | |
Liu et al. | Nanocrystal light-emitting diodes based on type II nanoplatelets | |
Wang et al. | Ultralow-threshold and color-tunable continuous-wave lasing at room-temperature from in situ fabricated perovskite quantum dots | |
Li et al. | Size-and morphology-dependent auger recombination in CsPbBr3 perovskite two-dimensional nanoplatelets and one-dimensional nanorods | |
Li et al. | Controllable vapor-phase growth of inorganic perovskite microwire networks for high-efficiency and temperature-stable photodetectors | |
Fan et al. | Colloidal CdSe1–x S x Nanoplatelets with Narrow and Continuously-Tunable Electroluminescence | |
Dutta et al. | Annealing CsPbX3 (X= Cl and Br) perovskite nanocrystals at high reaction temperatures: phase change and its prevention | |
Levchuk et al. | Brightly luminescent and color-tunable formamidinium lead halide perovskite FAPbX3 (X= Cl, Br, I) colloidal nanocrystals | |
Singldinger et al. | Nonradiative energy transfer between thickness-controlled halide perovskite nanoplatelets | |
Zou et al. | Template-free synthesis of high-yield Fe-doped cesium lead halide perovskite ultralong microwires with enhanced two-photon absorption | |
Wang et al. | Pressure-induced structural and optical properties of organometal halide perovskite-based formamidinium lead bromide | |
Lee et al. | Over 40 cd/A efficient green quantum dot electroluminescent device comprising uniquely large-sized quantum dots | |
Yang et al. | Enhancing light emission of ZnO microwire-based diodes by piezo-phototronic effect | |
Hou et al. | Concurrent inhibition and redistribution of spontaneous emission from all inorganic perovskite photonic crystals | |
Li et al. | Current understanding of band-edge properties of halide perovskites: urbach tail, rashba splitting, and exciton binding energy | |
Dou et al. | Lattice distortion in mixed-anion lead halide perovskite nanorods leads to their high fluorescence anisotropy | |
Khan et al. | Evolution of long range bandgap tunable lead sulfide nanocrystals with photovoltaic properties | |
Guo et al. | Enhanced heat dissipation in gallium nitride-based light-emitting diodes by piezo-phototronic effect | |
Zheng et al. | Localized excitonic electroluminescence from carbon nanodots | |
Liu et al. | Management of electroluminescence from silver-doped colloidal quantum well light-emitting diodes | |
Wang et al. | Electrically pumped polarized exciton-polaritons in a halide perovskite microcavity | |
Huang et al. | Enhanced luminescence performance of quantum wells by coupling piezo-phototronic with plasmonic effects |