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Micovic et al., 2016 - Google Patents

Ka-band LNA MMIC's realized in Fmax> 580 GHz GaN HEMT technology

Micovic et al., 2016

Document ID
7745728281406745164
Author
Micovic M
Brown D
Regan D
Wong J
Tai J
Kurdoghlian A
Herrault F
Tang Y
Burnham S
Fung H
Schmitz A
Khalaf I
Santos D
Prophet E
Bracamontes H
McGuire C
Grabar R
Publication year
Publication venue
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

External Links

Snippet

We report the first generation of GaN MMIC circuits that are based on the latest generation of (ft> 320 GHz and fmax> 580 GHz)[1] GaN Transistors. The reported broadband Ka-band (27 GHz-40 GHz) GaN LNA MMIC's have Noise Figure (NF) as low as 1 dB measured at a …
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    • H—ELECTRICITY
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    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
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    • H03F1/22—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
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