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Nishii et al., 2003 - Google Patents

High mobility thin film transistors with transparent ZnO channels

Nishii et al., 2003

Document ID
763976172102168513
Author
Nishii J
Hossain F
Takagi S
Aita T
Saikusa K
Ohmaki Y
Ohkubo I
Kishimoto S
Ohtomo A
Fukumura T
Matsukura F
Ohno Y
Koinuma H
Ohno H
Kawasaki M
Publication year
Publication venue
Japanese journal of applied physics

External Links

Snippet

We have fabricated high performance ZnO thin film transistors (TFTs) using CaHfO x buffer layer between ZnO channel and amorphous silicon–nitride gate insulator. The TFT structure, dimensions, and materials set are identical to those of the commercial amorphous silicon (a …
Continue reading at iopscience.iop.org (other versions)

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    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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