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Yamazaki et al., 2016 - Google Patents

Four-directional pixel-wise polarization CMOS image sensor using air-gap wire grid on 2.5-μm back-illuminated pixels

Yamazaki et al., 2016

Document ID
7626385434650361889
Author
Yamazaki T
Maruyama Y
Uesaka Y
Nakamura M
Matoba Y
Terada T
Komori K
Ohba Y
Arakawa S
Hirasawa Y
Kondo Y
Murayama J
Akiyama K
Oike Y
Sato S
Ezaki T
Publication year
Publication venue
2016 IEEE international electron devices meeting (IEDM)

External Links

Snippet

Polarization information is useful in highly functional imaging. This paper presents a four- directional pixel-wise polarization CMOS image sensor using an air-gap wire grid on 2.5-μm back-illuminated pixels. The fabricated air-gap wire grid polarizer achieved a transmittance …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
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    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
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    • H01L27/14623—Optical shielding
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    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
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    • H01L27/144—Devices controlled by radiation
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    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
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    • H01L27/144—Devices controlled by radiation
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    • H01L27/14643—Photodiode arrays; MOS imagers
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    • G02B26/00—Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating, modulating

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