Nothing Special   »   [go: up one dir, main page]

Gharahcheshmeh et al., 2018 - Google Patents

Control of in-field performance of 25 mol.% Zr-added REBCO superconductor tapes

Gharahcheshmeh et al., 2018

View PDF
Document ID
7587331954492022573
Author
Gharahcheshmeh M
Majkic G
Galstyan E
Xu A
Zhang Y
Li X
Selvamanickam V
Publication year
Publication venue
Physica C: Superconductivity and its applications

External Links

Snippet

The relation between the c-axis lattice parameter of REBa 2 Cu 3 O 7− δ (REBCO and RE= Gd, Y) superconductors with 25 mol.% Zr addition and the critical current density (J c) was determined at (77 K, 0 T),(30 K, 3 T (B|| c)), and (30 K, 9 T (B|| c)). In this work, heavily doped …
Continue reading at www.sciencedirect.com (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
    • H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
    • H01L39/2422—Processes for depositing or forming superconductor layers
    • H01L39/2454—Processes for depositing or forming superconductor layers characterised by the substrate
    • H01L39/2461—Intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
    • H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
    • H01L39/2422—Processes for depositing or forming superconductor layers
    • H01L39/2425—Processes for depositing or forming superconductor layers from a solution
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
    • H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
    • H01L39/2422—Processes for depositing or forming superconductor layers
    • H01L39/2451—Precursor deposition followed by after-treatment, e.g. oxidation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/02—Details
    • H01L39/12—Details characterised by the material
    • H01L39/125—Ceramic materials
    • H01L39/126—Ceramic materials comprising copper oxide
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
    • H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
    • H01L39/2464—After-treatment, e.g. patterning
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
    • H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
    • H01L39/2483—Introducing flux pinning centres
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/22—Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices
    • H01L39/223—Josephson-effect devices
    • H01L39/225—Josephson-effect devices comprising high Tc ceramic materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/14—Permanent superconductor devices
    • H01L39/143—Permanent superconductor devices comprising high Tc ceramic materials

Similar Documents

Publication Publication Date Title
Gharahcheshmeh et al. Control of in-field performance of 25 mol.% Zr-added REBCO superconductor tapes
Selvamanickam et al. Critical current density above 15 MA cm− 2 at 30 K, 3 T in 2.2 μm thick heavily-doped (Gd, Y) Ba2Cu3Ox superconductor tapes
Hiramatsu et al. Thin film growth and device fabrication of iron-based superconductors
Takahashi et al. Investigation of thick PLD-GdBCO and ZrO2 doped GdBCO coated conductors with high critical current on PLD-CeO2 capped IBAD-GZO substrate tapes
Mele et al. Insertion of nanoparticulate artificial pinning centres in YBa2Cu3O7− x films by laser ablation of a Y2O3-surface modified target
Yoshida et al. Approaches in controllable generation of artificial pinning center in REBa2Cu3Oy-coated conductor for high-flux pinning
Cayado et al. Large critical current densities and pinning forces in CSD-grown superconducting GdBa2Cu3O7− x-BaHfO3 nanocomposite films
US20130196856A1 (en) Iron based superconducting structures and methods for making the same
Selvamanickam et al. Effect of rare-earth composition on microstructure and pinning properties of Zr-doped (Gd, Y) Ba2Cu3Ox superconducting tapes
Gharahcheshmeh et al. Superconducting transition width (ΔTc) characteristics of 25 mol% Zr-added (Gd, Y) Ba2Cu3O7− δ superconductor tapes with high in-field critical current density at 30 K
Zhao et al. Structural and superconducting characteristics of YBa2Cu3O7 films grown by fluorine-free metal-organic deposition route
Selvamanickam et al. Influence of Zr and Ce doping on electromagnetic properties of (Gd, Y)–Ba–Cu–O superconducting tapes fabricated by metal organic chemical vapor deposition
Zhao et al. High-speed growth of YBa2Cu3O7− δ superconducting films on multilayer-coated Hastelloy C276 tape by laser-assisted MOCVD
Shi et al. Deposition and interface structures of YBCO thin films via a non-fluorine sol–gel route
JP2016522534A (en) Semiconductors with improved flux pinning at low temperatures
Liu et al. Formation of qualified BaHfO3 doped Y0. 5Gd0. 5Ba2Cu3O7− δ film on CeO2 buffered IBAD-MgO tape by self-seeding pulsed laser deposition
Jiang et al. Development of multipass MOCVD process for fabricating (Gd, Y) Ba2Cu3O7-δ coated conductors
Ibi et al. Development of long REBCO coated conductors with artificial pinning centers by using MPMT–PLD method
Qiao et al. Scale up of coated conductor substrate process by reel-to-reel planarization of amorphous oxide layers
Lei et al. The Structural Evolution of $(\hbox {Gd},\hbox {Y})\hbox {Ba} _ {2}\hbox {Cu} _ {3}\hbox {O} _ {\rm x} $ Tapes With Zr Addition Made by Metal Organic Chemical Vapor Deposition
Lei et al. A compositional gradient Ce1− xZrxO2 buffer architecture for producing high-performance YBCO film
Cui et al. Enhancement of critical current density of YBa2Cu3O7− δ thin films by nanoscale CeO2 pretreatment of substrate surfaces
Troshyn et al. La1− x Mn1− y O3±δ buffer layers on inclined substrate deposited MgO templates for coated conductors
Liu et al. The influence of substrate temperature of seed layer on the structure and superconducting property of BaHfO 3-Doped Y 0.5 Gd 0.5 Ba 2 Cu 3 O 7− δ film prepared by pulsed laser deposition
Zhao et al. High-Jc YBa2Cu3O7− δ superconducting film grown by laser-assisted chemical vapor deposition using a single liquid source and its microstructure