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Maurya et al., 2022 - Google Patents

Review of FinFET devices and perspective on circuit design challenges

Maurya et al., 2022

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Document ID
6849972285574573438
Author
Maurya R
Bhowmick B
Publication year
Publication venue
Silicon

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In recent technology, the demand for 3D multiple-gate MOSFETs such as FinFETs increase. In this paper, FinFETs are explored and reviewed. The scaling of planar MOSFET below 32nm technology increases the short channel effects (SCE). To improve the concert in low …
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