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Ye et al., 1991 - Google Patents

Experimental studies on primary and secondary pyroelectric effects in Pb (Zr x Ti1− x) O3, PbTiO3, and ZnO thin films

Ye et al., 1991

Document ID
6672403030110331146
Author
Ye C
Tamagawa T
Polla D
Publication year
Publication venue
Journal of applied physics

External Links

Snippet

The pyroelectric coefficients and pyroelectric response in lead zirconate titanate (Pb (Zr x Ti1− x) O3), lead titanate (PbTiO3), and zinc oxide (ZnO) thin films (0.1–2.0‐μm thick) have been studied for possible integrated thermosensor applications. Pyroelectric properties of …
Continue reading at pubs.aip.org (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/10—Radiation pyrometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry using electric radiation detectors using capacitors, e.g. pyroelectric elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/10—Radiation pyrometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry using electric radiation detectors using resistors, thermistors, or semi-conductors sensitive to radiation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L37/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L37/02—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof using thermal change of dielectric constant, e.g. working above and below Curie point, e.g. pyroelectric devices
    • H01L37/025—Selection of materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/22—Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
    • H01L41/35—Forming piezo-electric or electrostrictive materials
    • H01L41/45—Organic materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/08—Piezo-electric or electrostrictive devices
    • H01L41/113—Piezo-electric or electrostrictive devices with mechanical input and electrical output, e.g. generators, sensors
    • H01L41/1132—Sensors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/16—Selection of materials

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