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Muhsien et al., 2013 - Google Patents

Preparation and Characterization of (Au/n-SnO 2/SiO 2/Si/Al) MIS Device for Optoelectronic Application.

Muhsien et al., 2013

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Document ID
6639629171128726868
Author
Muhsien M
Salem E
Agool I
Publication year
Publication venue
International Journal of Optics

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Snippet

SnO2 thin films were prepared by using rapid thermal oxidation (RTO) of Sn at oxidation temperature 873 K and oxidation time 90 sec on semiconductor n-type and p-type silicon substrate. In order to characterize the prepared device, the electrical properties have been …
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