Nothing Special   »   [go: up one dir, main page]

Lee et al., 2023 - Google Patents

Nanomaterial-based synaptic optoelectronic devices for in-sensor preprocessing of image data

Lee et al., 2023

View HTML @Full View
Document ID
659656978143283111
Author
Lee M
Seung H
Kwon J
Choi M
Kim D
Choi C
Publication year
Publication venue
ACS omega

External Links

Snippet

With the advance in information technologies involving machine vision applications, the demand for energy-and time-efficient acquisition, transfer, and processing of a large amount of image data has rapidly increased. However, current architectures of the machine vision …
Continue reading at pubs.acs.org (HTML) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • Y02E10/549—Material technologies organic PV cells
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/42—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors

Similar Documents

Publication Publication Date Title
Liang et al. Fully printed optoelectronic synaptic transistors based on quantum dot–metal oxide semiconductor heterojunctions
Yang et al. Photoelectric memristor-based machine vision for artificial intelligence applications
Hou et al. Large-scale and flexible optical synapses for neuromorphic computing and integrated visible information sensing memory processing
Feng et al. 2D photonic memristor beyond graphene: progress and prospects
Luo et al. Artificial optoelectronic synapses based on ferroelectric field-effect enabled 2D transition metal dichalcogenide memristive transistors
Hong et al. Neuromorphic active pixel image sensor array for visual memory
Jang et al. Amorphous InGaZnO (a-IGZO) synaptic transistor for neuromorphic computing
Lee et al. Nanomaterial-based synaptic optoelectronic devices for in-sensor preprocessing of image data
Kumar et al. Environment-adaptable photonic–electronic-coupled neuromorphic angular visual system
Jiang et al. Deep ultraviolet light stimulated synaptic transistors based on poly (3-hexylthiophene) ultrathin films
Chen et al. Bidirectional synaptic phototransistor based on two-dimensional ferroelectric semiconductor for mixed color pattern recognition
Zhang et al. A reconfigurable all-optical-controlled synaptic device for neuromorphic computing applications
Das et al. Artificial visual systems fabricated with ferroelectric van der Waals heterostructure for in-memory computing applications
Wang et al. A three-dimensional neuromorphic photosensor array for nonvolatile in-sensor computing
Zhang et al. Bidirectional photoresponse in a mixed-dimensional MoS2/Ge heterostructure and its optic-neural synaptic behavior for colored pattern recognition
Zhang et al. Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks
Guo et al. High-performance artificial synapse based on CVD-grown WSe2 flakes with intrinsic defects
Sun et al. Bio-inspired vision and neuromorphic image processing using printable metal oxide photonic synapses
Wu et al. Progress in bioinspired photodetectors design for visual information processing
Li et al. Solution-processed organic–inorganic semiconductor heterostructures for advanced hybrid phototransistors
Zhang et al. Inorganic halide perovskite nanowires/conjugated polymer heterojunction-based optoelectronic synaptic transistors for dynamic machine vision
Wang et al. Molecular-layer-defined asymmetric Schottky contacts in organic planar diodes for self-powered optoelectronic synapses
Li et al. Multimodal artificial synapses for neuromorphic application
Wang et al. Silicon-nanomembrane-based broadband synaptic phototransistors for neuromorphic vision
Lv et al. Low-dimensional optoelectronic synaptic devices for neuromorphic vision sensors