Nothing Special   »   [go: up one dir, main page]

Kimura et al., 2020 - Google Patents

Energy distribution of interface states generated by oxygen plasma treatment for control of threshold voltage in pentacene thin-film transistors

Kimura et al., 2020

Document ID
6552076663534093169
Author
Kimura Y
Hattori Y
Kitamura M
Publication year
Publication venue
Journal of Physics D: Applied Physics

External Links

Snippet

Pentacene metal-oxide-semiconductor (MOS) capacitors with a SiO 2 dielectric treated by oxygen plasma have been studied by capacitance-voltage (CV) measurements to investigate the energy distribution of the interface states. Oxygen plasma treatment, which is …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/005—Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
    • H01L51/0052—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Similar Documents

Publication Publication Date Title
Huang et al. Effects of ambient atmosphere on electrical characteristics of Al2O3 passivated InGaZnO thin film transistors during positive-bias-temperature-stress operation
Pattanasattayavong et al. Study of the hole transport processes in solution‐processed layers of the wide bandgap semiconductor copper (I) thiocyanate (CuSCN)
JP6061858B2 (en) Field effect transistor and manufacturing method thereof
Liao et al. Effect of mechanical-strain-induced defect generation on the performance of flexible amorphous In–Ga–Zn–O thin-film transistors
Jinno et al. Low operating voltage organic transistors and circuits with anodic titanium oxide and phosphonic acid self-assembled monolayer dielectrics
Kim et al. Low voltage driven, stable solution-processed zinc-tin-oxide TFT with HfOy and AlOx stack gate dielectric
Lau An extended unified Schottky-Poole-Frenkel theory to explain the current-voltage characteristics of thin film metal-insulator-metal capacitors with examples for various high-k dielectric materials
Jeong et al. Comprehensive study on the transport mechanism of amorphous indium-gallium-zinc oxide transistors
Bisoyi et al. A comprehensive study of charge trapping in organic field-effect devices with promising semiconductors and different contact metals by displacement current measurements
Rabbi et al. Extremely stable dual gate coplanar amorphous InGaZnO thin film transistor with split active layer by N 2 O annealing
Huo et al. Dual-active-layer InGaZnO high-voltage thin-film transistors
Kimura et al. Energy distribution of interface states generated by oxygen plasma treatment for control of threshold voltage in pentacene thin-film transistors
Yan et al. Reliability issues of thin film transistors subject to electrostatic discharge stresses: an overview
Hsu et al. Flexible InGaZnO thin film transistors using stacked Y2O3/TiO2/Y2O3 gate dielectrics grown at room temperature
Kesorn et al. High performance amorphous In–Ga–Zn–O thin-film transistors with low temperature high-k solution processed hybrid gate insulator
Hsu et al. A study of trap-limited conduction influenced by plasma damage on the source/drain regions of amorphous InGaZnO TFTs
Agarwal Threshold voltage extraction for organic thin film transistor in linear region using asymmetric metal insulator semiconductor capacitive test structure
Zhou et al. High-performance and operationally stable organic thin-film transistors using bi-buffer layers with low-cost electrodes
Chung et al. Oxygen-adsorption-induced anomalous capacitance degradation in amorphous indium-gallium-zinc-oxide thin-film-transistors under hot-carrier stress
Kono et al. Hydrogenated In–Ga–Zn–O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices
Tang et al. Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress
Kimura et al. Operational stability in pentacene thin-film transistors with threshold voltages tuned by oxygen plasma treatment
Kim et al. Thickness dependence of gate dielectric and active semiconductor on InGaZnO4 TFT fabricated on plastic substrates
Kim et al. Observation of the hysteresis behavior of pentacene thin-film transistors in I–V and C–V measurements
Hwang et al. Pentacene-Based TTFTs with Polymer Gate Dielectric and NiO x Electrodes