Han et al., 2015 - Google Patents
Resonant-enhanced full-color emission of quantum-dot-based micro LED display technologyHan et al., 2015
View HTML- Document ID
- 6464149235381799887
- Author
- Han H
- Lin H
- Lin C
- Chong W
- Li J
- Chen K
- Yu P
- Chen T
- Chen H
- Lau K
- Kuo H
- Publication year
- Publication venue
- Optics express
External Links
Snippet
Colloidal quantum dots which can emit red, green, and blue colors are incorporated with a micro-LED array to demonstrate a feasible choice for future display technology. The pitch of the micro-LED array is 40μm, which is sufficient for high-resolution screen applications. The …
- 238000005516 engineering process 0 title abstract description 32
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/28—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
- H01L27/32—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
- H01L27/3206—Multi-colour light emission
- H01L27/322—Multi-colour light emission using colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photo-luminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2251/00—Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
- H01L2251/50—Organic light emitting devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Han et al. | Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology | |
Huang Chen et al. | Full-color monolithic hybrid quantum dot nanoring micro light-emitting diodes with improved efficiency using atomic layer deposition and nonradiative resonant energy transfer | |
Liu et al. | Micro-light-emitting diodes with quantum dots in display technology | |
Lin et al. | Optical cross-talk reduction in a quantum-dot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold | |
Xuan et al. | Inkjet-printed quantum dot color conversion films for high-resolution and full-color micro light-emitting diode displays | |
Zhang et al. | Active matrix monolithic micro‐LED full‐color micro‐display | |
Lin et al. | The micro-LED roadmap: status quo and prospects | |
Wang et al. | Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon | |
Talapin et al. | Quantum dot light-emitting devices | |
US9865577B2 (en) | LED display with wavelength conversion layer | |
Wang et al. | Full-color micro-LED display based on a single chip with two types of InGaN/GaN MQWs | |
Jain et al. | High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes | |
Han et al. | Toward high‐resolution, inkjet‐printed, quantum dot light‐emitting diodes for next‐generation displays | |
Qi et al. | Monolithically integrated high-resolution full-color GaN-on-Si micro-LED microdisplay | |
Yang et al. | Towards micro-PeLED displays | |
Chen et al. | Color revolution: prospects and challenges of quantum‐dot light‐emitting diode display technologies | |
CN105097879A (en) | Display panel | |
US20200373279A1 (en) | Color Conversion Layers for Light-Emitting Devices | |
Singh et al. | CsPbBr3 perovskite quantum-dot paper exhibiting a highest 3 dB bandwidth and realizing a flexible white-light system for visible-light communication | |
Li et al. | Monolithic full‐color microdisplay using patterned quantum dot photoresist on dual‐wavelength LED epilayers | |
Liu et al. | Color-conversion efficiency enhancement of quantum dots via selective area nano-rods light-emitting diodes | |
Lin et al. | Efficiency enhancement of light color conversion through surface plasmon coupling | |
Gaurav et al. | Ultrahigh-resolution full-color micro-LED array with enhanced efficiency based on a color conversion technique | |
Ni et al. | Förster resonance energy transfer in surface plasmon coupled color conversion processes of colloidal quantum dots | |
Shi et al. | Enhanced performance of GaN-based visible flip-chip mini-LEDs with highly reflective full-angle distributed Bragg reflectors |