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Maroldt et al., 2008 - Google Patents

Gate Recessed AlGaN/GaN Based Normally-Off HEMTs for High Frequency Operation

Maroldt et al., 2008

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Document ID
6156231995993165830
Author
Maroldt S
Haupt C
Pletschen W
Müller S
Quay R
Ambacher O
Publication year
Publication venue
Proc. Int. Conf. Solid State Devices Mater

External Links

Snippet

AlGaN/GaN heterostructure based high electron mobility transistors (HEMTs) offer excellent electronic properties for next generation solid state microwave power amplifiers. Equally important as remarkable device properties a verified reliability is required. In recent years …
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