Chen et al., 2020 - Google Patents
A 28-GHz-band highly linear stacked-FET power amplifier IC with high back-off PAE in 56-nm SOI CMOSChen et al., 2020
- Document ID
- 6120652120501926945
- Author
- Chen C
- Sugiura T
- Yoshimasu T
- Publication year
- Publication venue
- IEICE Transactions on Electronics
External Links
Snippet
This paper presents a 28-GHz-band highly linear stacked-FET power amplifier (PA) IC. A 4- stacked-FET structure is employed for high output power considering the low breakdown voltage of scaled MOSFET transistors. A novel adaptive bias circuit is proposed to …
- 230000003044 adaptive 0 abstract description 27
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0294—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using vector summing of two or more constant amplitude phase-modulated signals
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
- H03F3/3055—Parallelled mixed SEPP stages, e.g. a CMOS common drain and a CMOS common source in parallel or bipolar SEPP and FET SEPP in parallel
- H03F3/3059—Parallelled mixed SEPP stages, e.g. a CMOS common drain and a CMOS common source in parallel or bipolar SEPP and FET SEPP in parallel with symmetrical driving of the end stage
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Ali et al. | A 28GHz 41%-PAE linear CMOS power amplifier using a transformer-based AM-PM distortion-correction technique for 5G phased arrays | |
Park et al. | Highly linear mm-wave CMOS power amplifier | |
Dabag et al. | Analysis and design of stacked-FET millimeter-wave power amplifiers | |
US7961048B2 (en) | Integrated power amplifiers for use in wireless communication devices | |
CN103748785B (en) | High efficiency power amplifier | |
Cho et al. | Linear Doherty power amplifier with an enhanced back-off efficiency mode for handset applications | |
Park et al. | High-performance CMOS power amplifier with improved envelope tracking supply modulator | |
Lee et al. | A CMOS outphasing power amplifier with integrated single-ended Chireix combiner | |
Xi et al. | High-efficiency E-band power amplifiers and transmitter using gate capacitance linearization in a 65-nm CMOS process | |
Jin et al. | Control of IMD asymmetry of CMOS power amplifier for broadband operation using wideband signal | |
Ryu et al. | CMOS Doherty amplifier with variable balun transformer and adaptive bias control for wireless LAN application | |
Nguyen et al. | A Ka-band asymmetrical stacked-FET MMIC Doherty power amplifier | |
Jin et al. | CMOS saturated power amplifier with dynamic auxiliary circuits for optimized envelope tracking | |
Lee et al. | A dual-power-mode output matching network for digitally modulated CMOS power amplifier | |
Tsai et al. | Wide-bandwidth and high-linearity envelope-tracking front-end module for LTE-A carrier aggregation applications | |
Chen et al. | A wideband power amplifier in 45 nm CMOS SOI technology for X band applications | |
Kawai et al. | A high-efficiency low-distortion GaN HEMT Doherty power amplifier with a series-connected load | |
Lee et al. | Fully monolithic BiCMOS reconfigurable power amplifier for multi-mode and multi-band applications | |
Makhsuci et al. | A review of Doherty power amplifier and load modulated balanced amplifier for 5G technology | |
Choi et al. | A 25-GHz power amplifier using three-stage antiphase linearization in bulk 65-nm CMOS technology | |
Liu et al. | A K-band power amplifier with adaptive bias in 90-nm CMOS | |
Chen et al. | A 28-GHz-band highly linear stacked-FET power amplifier IC with high back-off PAE in 56-nm SOI CMOS | |
Kim et al. | Ka-Band Three-Stacked CMOS Power Amplifier With LC Shunt-Feedback to Enhance Gain and Stability | |
Xiao et al. | A Ka-band CMOS power amplifier with OP1dB improvement employing a diode-connected analog linearizer | |
Rusanen et al. | Ka-band orthogonal load-modulated balanced amplifier in 22 nm CMOS FDSOI |