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Higashiwaki et al., 2008 - Google Patents

Millimeter-wave GaN HFET technology

Higashiwaki et al., 2008

Document ID
6095659056790897902
Author
Higashiwaki M
Mimura T
Matsui T
Publication year
Publication venue
Gallium Nitride Materials and Devices III

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Snippet

This paper describes device process and characteristics of sub-100-nm-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) for millimeter-wave applications. We developed three techniques to suppress short-channel effects and thereby enhance high …
Continue reading at www.spiedigitallibrary.org (other versions)

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    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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