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Sicre et al., 2023 - Google Patents

Hot-Carrier Degradation modeling of DCR drift in SPADs

Sicre et al., 2023

Document ID
5989173624050029405
Author
Sicre M
Roy D
Calmon F
Publication year
Publication venue
ESSDERC 2023-IEEE 53rd European Solid-State Device Research Conference (ESSDERC)

External Links

Snippet

DCR drift (ΔDCR) modeling in Single-Photon Avalanche Diodes (SPADs) is proposed based on hot-carrier degradation (HCD) mechanism. The bond dissociation rate constant is modeled at various stress temperatures and voltages by the carrier energy distribution …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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