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Lee et al., 2018 - Google Patents

Leakage current suppression in spatially controlled Si-doped ZrO2 for capacitors using atomic layer deposition

Lee et al., 2018

Document ID
5987527732384546
Author
Lee K
Jang W
Kim H
Lim H
Kim B
Seo H
Jeon H
Publication year
Publication venue
Thin Solid Films

External Links

Snippet

Among various high-k materials, zirconium dioxide (ZrO 2) has attracted considerable attention due to its high dielectric constant and wide band gap. However, its main disadvantage of ZrO 2 films which have tetragonal phase is its large leakage current along …
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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