Nothing Special   »   [go: up one dir, main page]

Li et al., 2016 - Google Patents

1-μm Micro-Lens Array on Flip-Chip LEDs

Li et al., 2016

Document ID
5970021202251405031
Author
Li K
Li K
Publication year
Publication venue
Nanostructuring for Nitride Light-Emitting Diodes and Optical Cavities

External Links

Snippet

The fabrication of hexagonally close-packed micro-lens array on sapphire face of flip-chip bonded LED by nanosphere lithography is demonstrated. Self-assembled silica spheres serve as an etch mask to transfer hemispherical geometry onto the sapphire. The optical and …
Continue reading at link.springer.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes

Similar Documents

Publication Publication Date Title
US9349918B2 (en) Light emitting element and method for manufacturing same
TWI514618B (en) An optical substrate, a semiconductor light emitting element, and a method of manufacturing the same
US7391059B2 (en) Isotropic collimation devices and related methods
US20070085098A1 (en) Patterned devices and related methods
JP5999800B1 (en) Deep ultraviolet LED and manufacturing method thereof
JP2008080461A (en) Particle arraying method and manufacturing method of light emitting element
US20070087459A1 (en) Patchwork patterned devices and related methods
Zhang et al. InGaN light‐emitting diodes with indium‐tin‐oxide sub‐micron lenses patterned by nanosphere lithography
JP2017519337A (en) Spatial positioning of photon emitters in plasmon illuminators
Yang et al. Unidirectional, ultrafast, and bright spontaneous emission source enabled by a hybrid plasmonic nanoantenna
Guo et al. Enhancing the light extraction of AlGaN-based ultraviolet light-emitting diodes in the nanoscale
US20070085083A1 (en) Anisotropic collimation devices and related methods
Zhu et al. Resonant cavity effect optimization of III-nitride thin-film flip-chip light-emitting diodes with microsphere arrays
JP2012513681A (en) Optoelectronic semiconductor chip and method of manufacturing optoelectronic semiconductor chip
Zuo et al. Improved optical and electrical performances of GaN-based light emitting diodes with nano truncated cone SiO 2 passivation layer
Li et al. Analysis of micro-lens integrated flip-chip InGaN light-emitting diodes by confocal microscopy
Abdelkhalik et al. Surface lattice resonances for beaming and outcoupling green μ LEDs emission
Chou et al. Polarization-selecting III-nitride elliptical nanorod light-emitting diodes fabricated with nanospherical-lens lithography
CN103370640A (en) Method of manufacturing an improved optical layer for a light emitting device with surface nano-micro texturation based on coherent electromagnetic radiation speckle lithography
Sheng et al. Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate
Li et al. 1-μm Micro-Lens Array on Flip-Chip LEDs
Liu et al. Light emitting enhancement and angle-resolved property of surface textured GaN-based vertical LED
JP2020017545A (en) Molds for manufacturing organic light emitting diodes
Li et al. 1-µm Micro-Lens Array on Flip-Chip Light-Emitting Diode
Chen et al. Enhanced light extraction efficiency of an LED package by a surface-mounted amorphous photonic structure