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Hu et al., 2007 - Google Patents

Gettering of nickel within the Ni-metal induced lateral crystallization polycrystalline silicon film through the contact holes

Hu et al., 2007

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Document ID
5819537156883907590
Author
Hu C
Wu Y
Publication year
Publication venue
Japanese Journal of Applied Physics

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Ni-metal-induced lateral crystallization (NILC) of amorphous Si (α-Si) has been used to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). The current crystallization technology, however, often leads to trap Ni and …
Continue reading at ir.lib.nycu.edu.tw (PDF) (other versions)

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