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Chen et al., 2005 - Google Patents

Design of superjunction power MOSFET devices using the gradient oxide-bypassed structure

Chen et al., 2005

Document ID
556624623462666046
Author
Chen Y
Liang Y
Samudra G
Publication year
Publication venue
2005 International Conference on Power Electronics and Drives Systems

External Links

Snippet

Superjunction (SJ) and other concepts have been proposed to overcome ideal silicon MOSFET limit and to lower the on-state resistance without sacrificing the breakdown rating. The gradient oxide-bypassed structure (GOB) is one such novel structure, in which a slanted …
Continue reading at ieeexplore.ieee.org (other versions)

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