Park et al., 1998 - Google Patents
Relaxor-based ferroelectric single crystals for electromechanical actuatorsPark et al., 1998
View PDF- Document ID
- 5462731911588073146
- Author
- Park S
- Vedula V
- Pan M
- Hackenberger W
- Pertsch P
- Shrout T
- Publication year
- Publication venue
- Smart Structures and Materials 1998: Smart Materials Technologies
External Links
Snippet
The piezoelectric properties of relaxor based ferroelectric single crystals, such as Pb (Zn 1/3 Nb 2/3) O 3-PbTiO 3 (PZN-PT) and Pb (Mg 1/3 Nb 2/3) O 3-PbTiO 3 (PMN-PT) were investigated for electromechanical actuators. In contrast to polycrystalline materials such as …
- 239000000919 ceramic 0 abstract description 45
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L41/16—Selection of materials
- H01L41/18—Selection of materials for piezo-electric or electrostrictive devices, e.g. bulk piezo-electric crystals
- H01L41/187—Ceramic compositions, i.e. synthetic inorganic polycrystalline compounds incl. epitaxial, quasi-crystalline materials
- H01L41/1875—Lead based oxides
- H01L41/1876—Lead zirconate titanate based
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
- C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L41/08—Piezo-electric or electrostrictive devices
- H01L41/09—Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators
- H01L41/0926—Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L41/02—Details
- H01L41/04—Details of piezo-electric or electrostrictive devices
- H01L41/047—Electrodes or electrical connection arrangements
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L41/22—Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
- H01L41/31—Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
- H01L41/314—Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L41/22—Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
- H01L41/35—Forming piezo-electric or electrostrictive materials
- H01L41/39—Inorganic materials
- H01L41/43—Inorganic materials by sintering
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L41/22—Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
- H01L41/33—Shaping or machining of piezo-electric or electrostrictive bodies
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Park et al. | Relaxor based ferroelectric single crystals for electro-mechanical actuators | |
Park et al. | Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals | |
US5998910A (en) | Relaxor ferroelectric single crystals for ultrasound transducers | |
US5804907A (en) | High strain actuator using ferroelectric single crystal | |
Park et al. | Characteristics of relaxor-based piezoelectric single crystals for ultrasonic transducers | |
Messing et al. | Templated grain growth of textured piezoelectric ceramics | |
Tan et al. | Direct observations of electric field-induced domain boundary cracking in< 001> oriented piezoelectric Pb (Mg 1/3 Nb 2/3) O 3–PbTiO 3 single crystal | |
EP1655789A1 (en) | Domain controlled piezoelectric single crystal and fabrication method therefor | |
US8241519B2 (en) | Relaxor-PT ferroelectric single crystals | |
Priya et al. | Dielectric and piezoelectric properties of the Mn-substituted Pb (Zn 1/3 Nb 2/3) O 3–PbTiO 3 single crystal | |
Zhang et al. | Electromechanical properties of PMN–PZT piezoelectric single crystals near morphotropic phase boundary compositions | |
Park et al. | Relaxor-based ferroelectric single crystals for electromechanical actuators | |
Kathavate et al. | Tailoring nanomechanical properties of hard and soft PZT piezoceramics via domain engineering by selective annealing | |
Guo et al. | Domain configuration and ferroelectric related properties of the (110) cub cuts of relaxor-based Pb (Mg1/3Nb2/3) O3–PbTiO3 single crystals | |
Liu et al. | Enhanced Electromechanical Performance in Lead-free (Na, K) NbO3-Based Piezoceramics via the Synergistic Design of Texture Engineering and Sm-Modification | |
Hackenberger et al. | Effect of grain size on actuator properties of piezoelectric ceramics | |
Park et al. | Relaxor-based single-crystal materials for ultrasonic transducer applications | |
Wang | The piezoelectric and dielectric properties of PZT–PMN–PZN | |
Shrout et al. | Innovations in piezoelectric materials for ultrasound transducers | |
Harada et al. | Growth of Pb [(Zn1/3Nb2/3) 0.91 Tio. 09] 03 single crystal of ultrasonic transducer for medical application | |
Sébald et al. | Stability of morphotropic< 110> oriented 0.65 PMN-0.35 PT single crystals | |
Deng et al. | Property improvement of 0.3 Pb (Zn1/3Nb2/3) O3-0.7 Pb0. 96La0. 04 (ZrxTi1− x) 0.99 O3 ceramics by hot-pressing | |
Shrout et al. | Recent advances in piezoelectric materials | |
Ogawa | Poling field dependence of ferroelectric properties in piezoelectric ceramics and single crystal | |
Tichý et al. | Piezoelectric materials |